| 摘要 |
An avalanche photodiode includes a region of second conductivity type extending a distance into a substrate and a region of first conductivity type extending a further distance into the substrate of first conductivity type with a P-N junction therebetween. The invention is a method for fabricating an avalanche photodiode having a specified breakdown voltage. The method includes the step of measuring the concentration of the first type conductivity modifiers and removing a portion of the surface of the substrate prior to forming the region of second conductivity type. This method provides control of the concentration of the first type conductivity modifiers at the P-N junction and thereby controls the breakdown voltage.
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