发明名称 |
Method of making a surface emitting light emitting diode |
摘要 |
A light-emitting diode and corresponding method for its fabrication, in which a blocking layer is used for current confinement, and a rectangular light emission pattern is employed, to avoid anisotropic effects when material systems such as indium phosphide are used. A critical step in the method of the invention is etching an opening through the blocking layer. The opening has its sides precisely oriented at forty-five degrees with respect to the cleavage planes of the substrate, to avoid exposing any crystal planes that are anisotropic.
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申请公布号 |
US4647320(A) |
申请公布日期 |
1987.03.03 |
申请号 |
US19850736880 |
申请日期 |
1985.05.22 |
申请人 |
TRW INC. |
发明人 |
REZEK, EDWARD A.;BURGHARD, ANDRE;CARPENTER, ALAN L. |
分类号 |
H01L33/00;H01L33/14;H01L33/24;(IPC1-7):H01L21/368 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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