发明名称 |
MIS SEMICONDUCTOR DEVICE |
摘要 |
By the use of high-resistivity polycrystalline silicon (poly) in MIS elements, a depletion layer can be formed in the poly material which brings about an electric decoupling between the poly (gate) and the underlying semiconductor body. This effect can be utilized advantageously in various circuit elements, such as in CCD's, in order to obtain a favorable potential distribution in the substrate; in MOS transistors in order to reduce the parasitic capacities; and in high-voltage devices in order to increase the breakdown voltage at the edge of the field plate (resurf). |
申请公布号 |
EP0111347(B1) |
申请公布日期 |
1987.03.11 |
申请号 |
EP19830201409 |
申请日期 |
1983.10.03 |
申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
ESSER, LEONARD JAN MARIE;WILTING, HERMANUS JOSEPHUS HENRICUS;STIKVOORT, EDUARD FERDINAND;VAES, HENRICUS MARIA JOSEPH;LUDIKHUIZE, ADRIANUS WILLEM |
分类号 |
H01L29/762;H01L21/339;H01L27/148;H01L29/06;H01L29/40;H01L29/423;H01L29/43;H01L29/49;H01L29/768;H01L29/78 |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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