Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement
摘要
High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.
申请公布号
US4660208(A)
申请公布日期
1987.04.21
申请号
US19840621071
申请日期
1984.06.15
申请人
AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES
发明人
JOHNSTON, JR., WILBUR D.;LONG, JUDITH A.;WILT, DANIEL P.
