发明名称 SPUTTERING APPARATUS
摘要 PURPOSE:To form a thin film having uniform characteristics in a range over a wide area by performing both adhesion of the film and gas doping to the inside of the film in the separated places. CONSTITUTION:An introduction pipe 6 of an inert gas for sputtering is provided to the neighborhood of a target electrode 4, and an introduction pipe 5 of a reactive gas for doping is provided in the position apart from the electrode 4 and near to an exhaust path 7. One part of the reactive gas introduced through the introduction pipe 5 is allowed to react with a thin film stuck on a rotating base plate 3 and the other part is diffused. The inert gas introduced through the introduction pipe 6 is diffused to the neighborhood of a discharge region and the amount of the reactive gas reaching the discharge region is decreased and exhausted via the exhaust path 7. By such a constitution as this, ununiformity of concn. distribution of the reactive gas in the discharge region is not caused and the uniformity of distribution of the doping amount to the inside of the film is not caused.
申请公布号 JPS62103364(A) 申请公布日期 1987.05.13
申请号 JP19850244510 申请日期 1985.10.30
申请人 NEC CORP 发明人 SUGITANI CHOEI
分类号 C23C14/34 主分类号 C23C14/34
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