| 摘要 |
PURPOSE:To obtain a semiconductor laser which has an optical beam of high quality capable of condensing to a fine spot having 1mu or less without astigmatism by providing a semiconductor layer having large forbidden band width and a stripe-like groove near an active layer to become a light emitting region. CONSTITUTION:First crystal laminates in which a semiconductor layer 3 to become a light emitting region is interposed between semiconductor layers 2 and 4 having larger forbidden band widths are provided on a semiconductor substrate 1. Second crystal laminates 5, 6 having a semiconductor layer 5 including a stripe-like groove and larger forbidden band width than the layer 3 to become a light emitting region adjacent to the first laminates 2-4. The third crystal laminates 7, 8 are further provided adjacent to the first and second laminates 2-6. An N-type Al0.45Ga0.55As layer 2, an N-type Al0.11Ga0.89As layer 3, a P-type Al0.4Ga0.6As layer 4, an N-type Al0.5Ga0.5 As layer 5 and an N-type GaAs layer 6 are sequentially formed, for example, on the N-type GaAs substrate 1. After a stripe-like groove which arrives at the layer 4 is then formed, a P-type Al0.4Ga0.6As layer 7 and a P-type GaAs layer 8 are sequentially formed, a P-type Al0.4Ga0.6As layer 7 and a P-type GaAs layer 8 are sequentially formed, an ohmic electrode 9 and an N-type ohmic electrode 10 are formed to construct a semiconductor laser.
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