发明名称 SEMICONDUCTOR MANUFACTURING EQUIPMENT
摘要 PURPOSE:To accurately determine the end of an etching process by a method wherein a heating means is provided on the wall of a reaction container. CONSTITUTION:A heating wire 7 is provided on the outer wall of a chamber 1 opposite to a termination detecting sensor 5 so that the emission spectrum of plasma generated in the chamber 1 may reach the termination detecting sensor 5 without being shielded by the heating wire 7. The inside wall of the chamber 1 is warmed when an electric current is applied to the heating wire 7 attached to the chamber 1, which prevents etching-created products from adhering to the inner wall of the chamber 1. This ensures accurate detection of the end of etching.
申请公布号 JPS62113425(A) 申请公布日期 1987.05.25
申请号 JP19850253974 申请日期 1985.11.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 ARITA HIDENORI;INADA TOSHIHIRO
分类号 H01L21/205;H01L21/302 主分类号 H01L21/205
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