| 摘要 |
PURPOSE:To form a solid-state image pickup device, density thereof can be increased and which has a blooming suppressing function and a smear suppressing function as well as a margin in the selection of well concentration, by surrounding a buried channel CCD by a layer having conductivity reverse to signal charges and high concentration. CONSTITUTION:A p-layer 22 is formed onto an n-substrate 21, and an n<-> layer 23 for constituting a buried channel CCD, an n<+> layer 25 for organizing a p-n junction photodiode for a light-receiving section and an n<-> layer 24 are shaped onto the p-layer 22. The n<-> layer 23 for forming the buried channel CCD is surrounded by a p layer 33 having concentration higher than the p-layer 22. The n<+> layer 24 can be shaped through automatic positioning, using a polysilicon electrode 29 as a mask, and is more convenient. The n<-> layer 24 can also be formed at the same time the n<-> layer 23 shaping the buried channel, and is more suitable on a manufacturing process.
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