发明名称 PLASMA CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 PURPOSE:To uniformly form a thin film till an end part of a base plate without generating an electric field between the base plate and a support by providing a grid which surrounds the neighborhood of an anode and has ground potential wherein electric discharge is performed between a cathode and it and setting both the base plate and a support supporting this base plate in electrically equipotential. CONSTITUTION:A grid 9 being in such a state that the neighborhood of an anode 4 is surrounded thereby is provided to a plasma chemical vapor deposition apparatus and set in ground potential together with the anode 4. In relation to a cathode 5, the grid 9 is made to an anodic electrode and electric discharge is caused between the cathode 5 and it. Also the grid 9 is provided to the neighborhood of a base plate 2 in order to prevent deposition velocity from being reduced. The support 3 is supported via a support 10 having electrically insulation properties to electrically float the support 3 supporting the base plate 2 and therefore the base plate 2 and the support 3 are made to equipotential.
申请公布号 JPS62130278(A) 申请公布日期 1987.06.12
申请号 JP19850270088 申请日期 1985.11.29
申请人 RICOH CO LTD 发明人 WATANABE YOSHIO
分类号 C23C16/50 主分类号 C23C16/50
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