发明名称 SUBSTRATE MASK FOR SPUTTERING APPARATUS
摘要 PURPOSE:To reduce the curvature of a substrate mask due to heat during sputtering and to produce a satisfactory masking effect by heat treating the mask at a temp. above the temp. of a substrate during sputtering. CONSTITUTION:A substrate 3a of alumina or the like having a formed electrode is fitted to a substrate holder 3 and a substrate mask 5 is fixed on the surface of the substrate 3a through mask supports 4. The mask 5 is made of stainless steel or the like and heat treated beforehand at a temp. above the temp. of the substrate 3a during sputtering to relieve the internal residual stress. Thus, the curvature of the mask 5 due to the heat of the substrate 3a during sputtering is reduced, a satisfactory masking effect is produced and a thin film having high dimensional accuracy can be formed.
申请公布号 JPS62139863(A) 申请公布日期 1987.06.23
申请号 JP19850279531 申请日期 1985.12.12
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MASUDA MINORU;AJIYAMA MASAHIKO;TAMAI TAKASHI
分类号 C23C14/04 主分类号 C23C14/04
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