发明名称 |
SUBSTRATE MASK FOR SPUTTERING APPARATUS |
摘要 |
PURPOSE:To reduce the curvature of a substrate mask due to heat during sputtering and to produce a satisfactory masking effect by heat treating the mask at a temp. above the temp. of a substrate during sputtering. CONSTITUTION:A substrate 3a of alumina or the like having a formed electrode is fitted to a substrate holder 3 and a substrate mask 5 is fixed on the surface of the substrate 3a through mask supports 4. The mask 5 is made of stainless steel or the like and heat treated beforehand at a temp. above the temp. of the substrate 3a during sputtering to relieve the internal residual stress. Thus, the curvature of the mask 5 due to the heat of the substrate 3a during sputtering is reduced, a satisfactory masking effect is produced and a thin film having high dimensional accuracy can be formed.
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申请公布号 |
JPS62139863(A) |
申请公布日期 |
1987.06.23 |
申请号 |
JP19850279531 |
申请日期 |
1985.12.12 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MASUDA MINORU;AJIYAMA MASAHIKO;TAMAI TAKASHI |
分类号 |
C23C14/04 |
主分类号 |
C23C14/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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