| 摘要 |
PURPOSE:To obtain a forming method of fine pattern of high accuracy, by arranging a fine pattern capable of monitoring dimensional accuracy, on a semiconductor chip. CONSTITUTION:Monitor patterns 41, 42a, 42b and 43 are arranged on a semiconductor chip 3. Longitudinal dimensions of the monitor patterns 42a and 42b, and a gap dimension (b) between the two monitor patterns 42a and 42b are measured at the same time. Based on these dimensional differences, the dimensional differences in X-direction and Y-direction which generate at the time of electron beam exposure can be monitored. The dimensional accuracy of a scanning-connection part can be monitored by measuring the monitor pattern 41. The monitor pattern 43 is arranged at the scanning-connection part to show being the scanning-connection part. The dimensional accuracy in X-direction and Y-direction can be monitored by a dimensional difference between the width of the monitor pattern 42a, (a), and that of the monitor pattern 41, (a').
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