| 摘要 |
PURPOSE:To enable the formation of a gate electrode having a short width and a low resistance by etching a portion of a resist with an ion beam, forming a pattern having a 'T'-shaped cross section utilizing the difference of the range of the ion beam into the resist from this portion and the non-etching portion, and forming an electrode. CONSTITUTION:A resist 2 is applied on a semiconductor substrate 1 to a thickness of 0.7mum, and when a place in which a gate electrode is to be formed is irradiated with 200keV ion beam 3a of 1X10<14>/cm<2>, it is etched away by about 0.2mum, and the resist thereunder is exposed as far as the bottom of the resist 2 to a radiation of about 1X10<13>/cm<2>. When the peripheral portion of that exposed portion 4a is irradiated with the same ion beam 3b of 1X10<13>/cm<2> to form an exposed portion 4b, it does not reach the semiconductor substrate 1, forming a resist exposed portion 4 having a 'T'-shaped cross section, and a resist pattern 5 is obtained by development. Then, after vapor-depositing Al which is a gate electrode material 6, the resist 2 is removed, and an electrode pattern 7 is formed by the lift-off method.
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