| 摘要 |
PURPOSE:To obtain an excellent epitaxial layer, from which a crystal defect is not generated, by leaving and removing an oxide film, etc. from an epitaxial- layer forming material shaped on the surface of the melt of the material in a housing chamber for a substrate supporter. CONSTITUTION:A housing chamber 20 housing a material 19 for forming an epitaxial layer is shaped to a second substrate supporter 13 in a pair of first and second cylindrical substrate supporters 12, 13 supporting a substrate 16. A through-hole 21 penetrating the second substrate supporter 13 is formed to the bottom of the housing chamber 20, an oxide 24 on a melt 19A, in which the epitaxial-layer forming material melts, is left in the housing chamber 20 housing the epitaxial-layer forming material when the melt 19A passes through the through-hole 21, and only the melt 19A from which the oxide 24 is removed is made to flow in under the substrate 16. The epitaxial layer having high quality from which a crystal defect is not generated is acquired on the substrate 16 through epitaxial growth by using the melt 19A from which the oxide 24 is removed.
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