| 摘要 |
PURPOSE:To obtain an epitaxial layer having uniform film thickness by starting the epitaxial growth after the temp. in the neighborhood of a jig for the growth is made uniform by the reduction in temp. CONSTITUTION:After a soln. for the growth is housed in a jig for the growth and the inside of a reaction tube is raisen in temp., it is reduced in temp. at 0.2 deg.C/min velocity and the temp. in the neiborhood of the jig for the growth is made uniform and thereafter the contact of the soln. for the growth and a base plate is started to perform the epitaxy. Since the epitaxial growth is performed after the temp. distribution of the jig for the growth is made uniform like the above-mentioned method, the uniformalization of the film thickness of the grown epitaxial layer can be contrived.
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