| 摘要 |
PURPOSE:To form a gate electrode with a T-shaped cross-section, and to eliminate the dispersion of characteristics due to the displacement of positioning by forming a first insulating film, in which source-drain and gate electrode forming sections are bored selectively, onto a semiconductor operating layer and removing an exposed unnecessary metal through a specific process. CONSTITUTION:A photo-resist layer 16 is patterned through a normal photo- process so that the opening width of a gate-electrode forming section 13 takes a value such as approximately 0.5mum and a space between a source-electrode forming section 14 and a drain-electrode forming section 15 a value such as approximately 2.5mum. The photo-resist layer 16 is removed, and the whole surface is coated with a CVDSiO2 film 17. The gate-electrode forming section 13 is coated selectively with a photo-resist 18, and operating layers 11 in the source and drain electrode forming sections 14, 15 are exposed through etching. A low-resistance GaAs layer 19 is shaped, and a metal forming a Schottky junction with the operating layer such as Al 20 is evaporated on the whole surface. The gate-electrode forming section 13 is coated selectively with a photo- resist 21, and unnecessary Al is removed by using an etching liquid, thus shaping a gate electrode 22 with a T-shaped cross-section.
|
