| 摘要 |
Provided is a semiconductor device provided with a semiconductor substrate, an electrode which contains aluminum and is provided on the surface side of the semiconductor substrate, and a barrier layer interposed between the semiconductor substrate and the electrode, wherein the barrier layer has, sequentially from the side closer to the semiconductor substrate, a first titanium nitride layer, a first titanium layer, a second titanium nitride layer, and a second titanium layer. |
