| 摘要 |
PURPOSE:To manufacture a semiconductor device in high yield by containing the heat-treating step of continuously reducing the temperature of a silicon semiconductor substrate from high temperature of 1,000 deg.C or higher to 700 deg.C or lower and the heat-treating step at intermediate temperature between the high temperature and the low temperature, thereby controlling the precipitate of oxygen of the substrate. CONSTITUTION:Several types of semiconductor substrates having different latent defect distributions are continuously heat-treated from high temperature of 1,100 deg.C to low temperature of 600 deg.C at suitable velocity such as 0.5 deg.C/min. to externally diffuse dissolved oxygen of a range near the surface of the substrate, and most of latent defects in the initial state of each substrate are once contracted, and new latent defect is again grown as the heat-treating temperature falls. Continuously, an intermediate temperature heat-treatment of approx. 800 deg.C is performed to form a fine defect due to precipitate of oxygen only in the interior of high oxygen density of the substrate to provide a gettering action.
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