| 发明名称 |
USE OF A SINTERED REFRACTORY MATERIAL BASED ON SILICON CARBIDE WITH A SILICON NITRIDE BINDER |
| 摘要 |
A sintered material based on silicon carbide (SiC) reactively sintered between 1,100° C. and 1,700° C. to form a silicon nitride binder (Si3N4), intended in particular for fabricating an aluminum electrolysis cell, including 0.05% to 1.5% of boron, the Si3N4/SiC weight ratio being in the range 0.05 to 0.45. |
| 申请公布号 |
HUE027172(T2) |
申请公布日期 |
2016.10.28 |
| 申请号 |
HUE09708679 |
申请日期 |
2009.02.05 |
| 申请人 |
Saint-Gobain Centre de Recherches et d'Etudes Europeen |
发明人 |
JORGE, Eric;MARGUIN, Olivier;MOITRIER, Olivier;CITTI, Olivier |
| 分类号 |
C04B38/00;C25C3/08;F27B3/08;F27B3/20;F27D1/00 |
主分类号 |
C04B38/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
