| 摘要 |
PURPOSE:To contemplate an improvement in luminescent brightness and lowering the voltage of a luminescent threshold value, by laminating an insulating layer onto at least one side of a luminescent layer formed from a phosphor doped with an impurity acting as an acceptor. CONSTITUTION:In a thin-film electroluminescence element in which a luminescent layer allows light emission by laminating an insulating layer onto at least one side of the luminescent layer and applying an AC voltage, the luminescent layer is formed from a phosphor and the phosphor is doped with an impurity component acting as an acceptor. In the element, the luminescent layer is doped with an acceptor aside from a luminescent center so that the element resembles a true semiconductor by charge compensation for a donor having n-type semiconductor characteristics and the resistance of the luminescent layer itself is increased. Accordingly, a high electrical field is applied to the luminescent layer itself and free electrons therein are accelerated to sufficient energy capable of exciting the luminescent center by the collision thereof with the electrons. Namely, an external exciting voltage is effectively applied to the luminescent layer, whereby the luminescent voltage can be lowered.
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