| 摘要 |
PURPOSE:To disuse a power feed line and to improve the degree of integration of a semiconductor memory device by connecting word lines, transfer gates, and flip-flops. CONSTITUTION:A semiconductor memory device 1 consists of plural word lines 2, plural couples of bit lines 3 and 4, and plural memory cells 5, and the cells 5 each consist of a flip-flop 51, and transfer gates Q52 and Q53. The lines 2, the gates of the transfer gates Q52 and Q53, and power terminals 51a and 51b of the flip-flops 51 are connected, and the sources S of the transfer gates Q52 and Q53 are connected to the lines 3. When no cell 5 is selected, the flip-flop 51 operates with electric power supplied from the line 2 and when a cell 5 is selected, the flip-flop 51 operates by being powered on through the line 3. Thus, there is no special feed line required, so the degree of integration of the device 1 is improved.
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