| 摘要 |
PURPOSE:To obtain the titled device wherein gaseous materials are rapidly and sufficiently mixed, the gaseous materials are transported at high speed, a semiconductor layer is epitaxially grown in a short time, and the poor quality is not caused by providing two gaseous material feed pipes with the different gas flowing directions. CONSTITUTION:The first gas feed pipe 3 for supplying a raw gas and the second raw gas feed pipe 4 are provided in the semiconductor producing device 1. The tip end 4A of the second gas feed pipe 4 is closed, and plural gas blowing holes 4B are formed on the pipe 4 is closed, and plural gas blowing holes 4B are formed on the side surface. Consequently, the gas from the second gas feed pipe 4 flows in the direction almost normal to the flow direction of the gas from the first gas feed pipe 3, and the raw gases are rapidly and sufficiently mixed. Accordingly, a sufficiently mixed gas can be sent to the surface of a substrate 7 even when the flow velocity is increased, and hence the poor quality and nonuniform thickness can be prevented even when a semiconductor layer is epitaxially grown in a short time.
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