| 摘要 |
PURPOSE:To increase drain currents by forming a gate electrode and implanting the ions of a high melting-point metal or a compound thereof in an element region in a semiconductor substrate to shape an silicide layer. CONSTITUTION:A fixed oxide film 22 is formed to the surface of an silicon substrate 21, a gate electrode 24 is shaped onto an element region through a gate oxide film 23, S/D regions 26, 27 are formed, and the gate oxide film 23 is etched selectively, using the gate electrode 24 as a mask, and oxidized. Consequently, thin oxide films 31a are shaped onto the surfaces of the S/D regions 26, 27, and a thick oxide film 31b is formed around the gate electrode 24. The ions of WF6<+> are implanted to the S/D regions 26, 27 and the gate electrode 24 from the upper sections of the oxide films 31a, 31b, and silicide layers 25a are shaped onto the surfaces of the S/D regions 26, 27 and an silicide 25b onto the surface of the gate electrode 24 through heat treatment. Accordingly, the resistance of the source-drain regions is lowered, thus increasing drain currents.
|
