MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To facilitate forming an emitter region and a base contact region with a distance shorter than the lower limit distance of the conventional constitution by a method wherein an emitter window is formed in a silicon oxide film and a polycrystalline silicon film containing arsenic is formed by evaporation and a region of the polycrystalline silicon film which is a little wider than the emitter window is left and a base contact region is formed outside the remaining region. CONSTITUTION:A base region 9 is formed in a semiconductor substrate 8. A silicon oxide film 10 is formed by evaporation on the surface and an emitter window 11 is formed. Then a polycrystalline silicon film 12 containing arsenic is formed by evaporation and resist 13 is applied to the surface. Photolithography process is applied to the resist 13 so as to leave a region of the polycrystalline silicon film 12 which is a little wider than the window 11 and then the polycrystalline silicon film 12 is etched. Then the silicon oxide film 10 is removed and a base contact region 15 is selectively formed on the semiconductor substrate 8 outside the remaining region of the polycrystalline silicon film. After that, metal is evaporated to form electrodes and an emitter electrode 16 and a base electrode 17 are formed by utilizing the difference in levels of the part where the polycrystalline silicon film 12 remains and the part where it does not.