| 摘要 |
PURPOSE:To improve yield by forming a groove in the surface of an silicon substrate by a dicing saw. CONSTITUTION:The surface of an Si substrate 1 is thermally oxidized to shape an SiO2 film 2, the SiO2 film 2 in element isolation regions is removed through a photoetching method, and U groove sections 3 in predetermined depth are formed to the surface of the Si substrate 6 by a dicing saw, and etched slightly in order to remove strain on the formation of the groove sections. The SiO2 film 2 used as a mask on etching is gotten rid of, and SiO2 films 4 are grown on the surface of the Si substrate 6 again and employed as insulating films among the element regions. A polycrystalline Si layer 5 as a supporter is grown on the surface of the Si substrate 6, the back of the Si substrate 6 is polished and taken away from the direction of the arrow to expose the SiO2 films as the insulating films among the element regions, and exposed surfaces are polished to shape element regions 6A, thus completing a dielectric isolating substrate. Accordingly, the grooves for isolation among the element regions can be formed with high accuracy, thus improving the yield of the dielectric isolating substrate.
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