发明名称 MANUFACTURING DEVICE FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To unify the electric field intensity between electrode plates by a method wherein a region of electrode plate mounting a semiconductor substrate is insulated from the other regions while the voltage impressed upon respective regions are controlled. CONSTITUTION:Within a pair of parallel electrode plates 1, a part mounting a semiconductor substrate 2 and the other parts are electrically insulated from each other by insulators 6. Electric field measuring devices 3 measure the electric field intensity on the parts perpendicular to the surface of semiconductor substrate 2 and the other parts to input the measured output signals (a) to a controller 4. The controller 4 controls the output voltage from high-frequency oscillators 5 so that the electric field intensity between the electric plates 2 perpendicular to the surface of substrate 2 may be equalized to that of any other parts. Through these procedures, the etching rate can be prevented from being differentiated between the central part and the peripheral part of substrate 2 making it feasible to form even films.
申请公布号 JPS62239521(A) 申请公布日期 1987.10.20
申请号 JP19860083485 申请日期 1986.04.10
申请人 NEC CORP 发明人 TOMIYAMA TOMOHIKO
分类号 H01L21/205;H01L21/302;H01L21/3065;H01L21/31 主分类号 H01L21/205
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