发明名称 DYNAMIC RAM
摘要 PURPOSE:To reduce the power consumption and the refresh time by applying the refresh while lots of memory arrays are made simultaneously selecting state and operating only a sense amplifier related to the selected word line at memory access. CONSTITUTION:A row decoder XDCRO, 1 use an address signal supplied from a row address buffer XADB to form selection signals for the word lines of memory arrays M0, 2 and M1, 3. Thus, word line circuits WDRVO, 2 and DWRV1, 3 make the word and dummy word lines of the corresponding memory arrays M0, 2 and M1, 3 into the selecting state. Only sense amplifiers SA0, 2 or SA1, 3 corresponding to the lines are activated at the same time and the power consumption is reduced. Then an address signal from a refresh control circuit REFC is sent to circuits SDCRO, 1 via the buffer XADB, all memory arrays M0-3 are driven at the same time to reduce the refresh time.
申请公布号 JPS62241198(A) 申请公布日期 1987.10.21
申请号 JP19860084115 申请日期 1986.04.14
申请人 HITACHI LTD 发明人 YANAGISAWA KAZUMASA
分类号 G11C11/401;G11C11/34;G11C11/406;G11C11/409 主分类号 G11C11/401
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