| 摘要 |
PURPOSE:To control the damage of a sample to the utmost and to prevent a decrease in the etching rate by using an ion source provided with a switching means and a gas source, carrying out ion-beam etching at the preceding etching stage, and performing ion etching at the succeeding stage. CONSTITUTION:A sample 22 set on a disk 18 rotating at a high speed in a vacuum vessel 6 is irradiated by an ion beam 14 introduced from an ECR-type ion source 2 introducing a microwave power from a microwave oscillator 10 and a reactive gas from a gas source 11, and ion-beam etching is carried out at a high speed. The etching quantity is detected by measuring a detection body 42 arranged on the disk 18 with a detector 44 and a counter 46. The progress of etching to the final stage of etching is detected in this way, and a gas branching switch 36 and a circulator 38 are actuated by a controller 48 to introduce the gas and the microwave power between a shutter 24 and the disk 18. Consequently, high-density plasma 50 is formed at this place, and etching is performed upto the final stage without damaging the sample by the ion therein.
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