| 摘要 |
PURPOSE:To obtain desired capacity variation and capacity value characteristic of a variable capacity unit by varying a heat treating time at high temperature of 300 deg.C or higher after forming a Schottky junction to alter the widths of a depleted layer of Schottky metal and compound semiconductor. CONSTITUTION:An n<+>type ion implanted region 3 is formed by ion implanting and the following annealing at 700 deg.C or higher in high density of hyper abrupt junction in an n-type active layer formed on an N<+>type density substrate 1, and a Schottky junction electrode 4 is formed thereon. When this unit is retreated at 200 deg.C or higher, a capacity value is varied in response to a treating time. Thus, desired capacity value and capacity variation ratio can be obtained in high accuracy.
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