| 摘要 |
PURPOSE:To enable a uniaxial anisotropic magnetic field to be controlled in a range from 3700 Oe to 2750 Oe, by varying the value of Y2O3/(Y2O3 + Sm2O3 + Lu2O3) in a material solution in the range of 0-0.101. CONSTITUTION:A crucible base 3 is disposed within a core tube 2 on which heater 1 is wound. A platinum crucible 4 is arranged on the crucible base 3. The crucible 4 contains material solution 8 of crystals to be grown. In the solution 8, oxides of various components of magnetic bubble garnet crystals (YSmLuCa)3(FeGe)5O12 to be grown on a Gd3Ga5O12 substrate 7 by means of liquid-phase epitaxial growth are taken into a PbO-B2O3 solvent. The value of Y2O3/(Y2O3 +Sm2O3 +Lu2O3) (ratio of molarities) in the solution 8 is varied in the range of 0-0.101, so that the uniaxial anisotropic magnetic field of the crystals can be controlled in a range from 3700 Oe to 2750 Oe.
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