DRY ETCHING APPARATUS

摘要

PURPOSE:To accelerate the etching speed by a method wherein a magnet is mounted on the rear surface of a cathode electrode of a plasma producing part to impress the cathode electrode with magnetic field perpendicularly to an electric field. CONSTITUTION:A silicon oxide film and a photoresist pattern as elements to be etched are formed on a silicon substrate while mixed gas of SF6 and CHF3 is used as an etching gas to impress the first electrode with high frequency power of 300W. A magnet is mounted on the back surface of the second electrode while the surface of the second electrode is impressed with a magnetic field perpendicularly to the direction of electric field to impress the second electrode with high frequency power of 600W. At this time, the etching speed of silicon oxide film can be accelelrated but the temperature of the third electrode as an intermediate electrode is not especially raised to raise the surface temperature of wafer.