| 摘要 |
PURPOSE:To prevent aluminum wirings from being disconnected even in a fine hole by coating it with aluminum and heat treating it at 600 deg.C or higher. CONSTITUTION:After a thermal oxide film 2 is formed on a silicon substrate 1 and a polycrystalline silicon gate electrode 3 is formed, a source region 4a and a drain region 4b are formed, a silicon oxide film 5 is formed by a vapor growth method, and a hole 6 is opened. Then, a titanium nitride film 7 is deposited by a sputtering method, and an aluminum 8 is further deposited. The aluminum 8 immediately after depositing is thinner than a flat part in the hole 6 of the silicon oxide film. When it is heat treated at 700 deg.C for 5 sec in an N2 atmosphere by a lamp annealing, the aluminum reflows even in a fine hole under its surface tension to improve the shape of the aluminum 8 in the hole 6. Thereafter, the aluminum 8 is selectively etched by a photoetching technique to form aluminum wirings 8a.
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