| 摘要 |
PURPOSE:To enable modulation at high speed by reducing parasitic capacitance, and to form structure having excellent controllability by constituting a first clad section of a conductivity type semiconductor layer and two semi-insulating semiconductor layers vertically holding the conductivity type semiconductor layer and having specific forbidden band width. CONSTITUTION: An InP semi-insulating buffer layer 11, an InGaAsP n<+> conductive layer 12, and an InP semi-insulating cap layer 13 are shaped onto an InP substrate 10 in succession by using vapor growth. An SiO2 layer is formed on the whole surface, a window is bored to the SiO2 layer through normal photolithography and chemical etching, a groove with a vertical surface is shaped through chemical etching, using the SiO2 layer as a mask, an InGaAsP active layer 19 and a P-type conductive layer 18 are grown in succession by employing vapor growth, and lastly electrodes 14 and 17 are shaped. A first clad section consists of the buffer layer 11, n<+>type conductive layer 12 and the cap layer 13, and a second clad section is composed of the p-type conductive layer 18. An active region 16 is held from the left and the right by the first clad section and the second clad section, and forms a double hetero-junction.
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