发明名称 CVD THIN FILM FORMATION APPARATUS
摘要 PURPOSE:To enable any residual SiO2 in a reactor to be exhausted out of the reactor very easily by a method wherein the reactor is arranged in a sealed up chamber fed with purified air such as a clean room or a clean venturi unit. CONSTITUTION:A reactor 1 is arranged in a reactor installation part 22 in a chamber 20 to be sealed up. The chamber 20 to be sealed up is e.g. a clean venturi unit or a clean room etc. provided with an airtight door freely opened and closed for taking in and out the reactor 1 as well as for carrying in and out a wafer while arranged with an air feeding duct 24 on the upper part of chamber 20. Furthermore, a dust arresting filter 26 is arranged between the duct 24 and the reactor installation part 22. On the other hand, an exhaust duct 28 connected to a proper exhaust fan or pump is arranged on the lower part of chamber 20 or the reactor installation part 22.
申请公布号 JPS62296426(A) 申请公布日期 1987.12.23
申请号 JP19860140615 申请日期 1986.06.17
申请人 HITACHI ELECTRONICS ENG CO LTD 发明人 OOYAMA KATSUMI;HIKIMA HITOSHI;TAKAMI KATSUMI;KISHIMOTO SATORU
分类号 H01L21/31 主分类号 H01L21/31
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