发明名称 |
CVD THIN FILM FORMATION APPARATUS |
摘要 |
PURPOSE:To enable any residual SiO2 in a reactor to be exhausted out of the reactor very easily by a method wherein the reactor is arranged in a sealed up chamber fed with purified air such as a clean room or a clean venturi unit. CONSTITUTION:A reactor 1 is arranged in a reactor installation part 22 in a chamber 20 to be sealed up. The chamber 20 to be sealed up is e.g. a clean venturi unit or a clean room etc. provided with an airtight door freely opened and closed for taking in and out the reactor 1 as well as for carrying in and out a wafer while arranged with an air feeding duct 24 on the upper part of chamber 20. Furthermore, a dust arresting filter 26 is arranged between the duct 24 and the reactor installation part 22. On the other hand, an exhaust duct 28 connected to a proper exhaust fan or pump is arranged on the lower part of chamber 20 or the reactor installation part 22.
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申请公布号 |
JPS62296426(A) |
申请公布日期 |
1987.12.23 |
申请号 |
JP19860140615 |
申请日期 |
1986.06.17 |
申请人 |
HITACHI ELECTRONICS ENG CO LTD |
发明人 |
OOYAMA KATSUMI;HIKIMA HITOSHI;TAKAMI KATSUMI;KISHIMOTO SATORU |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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