| 摘要 |
PURPOSE:To thin the film thickness of an active layer, and to realize the increase of an output by forming a stepped section to a P-type clad layer and bringing the width of the flat section of the stepped section to 140mum or less. CONSTITUTION:A mesa la is shaped onto a P-type GaAs substrate 1, an N-type GaAS current constriction layer 2 is grown and ridges 2a, 2b are formed, a P-type Al0.40Ga0.60As clad layer 3, an Al0.08Ga0.92As active layer 4, an N=type Al0.40Ga0.60As clad layer 5 and an N-type GaAs contact layer 6 are grown onto the ridges in succession through a liquid phase epitaxial growth method, and an N side electrode 7 and a P side electrode 8 are formed through evaporation. Growth on the ridges 2a, 2b is inhibited as compared to the side surfaces of the ridges 2a, 2b by the anisotropy of crystal growth, and the P-type clad layer 3 is grown flatly in the spread of width W on the ridges 2a, 2b. When the active layer 4 is grown on the layer 3, the growth of the active layer 4 on the flat section of the P-type clad layer 3 is suppressed largely. The width W of the flat section of the P-type clad layer 3 is brought to 140mum or less, thus allowing the thinning of the film thickness of the active layer 4, then realizing the increase of an output.
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