| 摘要 |
PURPOSE:To obtain a thin film which has a low fixed charge density and improved film quality by bringing a gas for excitation into collision against gaseous raw materials near a substrate to decompose the gaseous raw materials. CONSTITUTION:The gaseous raw materials such as SiH4 and N2O are introduced from an introducing port 10 for said materials into a vacuum chamber 100. On the other hand, the gas for excitation such as He or hydrogen is ionized in an ionization chamber 102, is accelerated by an acceleration electrode 106 and is introduced through a gas introducing port 103 into the vacuum chamber 100. The energy possessed by the molecules of the gas for excitation is mainly obtd. by the acceleration voltage and is approximately single; therefore the single decomposing reaction takes place when the molecules of the gas for excitation collide against the molecules of the gaseous raw material. The thin film of silicon oxide, etc., is thus obtd. on the substrate 105 positioned near the region where the collision of the above-mentioned two gases is induced by the single reaction.
|
