Integrated circuit comprising MOS transistors having electrodes of metallic silicide and a method of fabrication of said circuit

摘要

A novel MOS transistor structure comprises electrodes of metallic silicide and especially tantalum silicide. In the case of the gate electrode, the silicide is directly in contact with an insulating thin-film layer. In the case of the drain and source electrodes, the silicide is directly in contact with the monocrystalline silicon. The method of fabrication is thus simplified while avoiding the use of polycrystalline silicon.