发明名称 Fail memory equipment in memory tester
摘要 A fail memory equipment has a plurality of memory blocks which can be changed in their combinations serially or in parallel in accordance with the capacity of a memory to be tested, the number of channels to be tested simultaneously and the testing speed. The single fail memory equipment operates in an interleave fetching mode for a high speed test, in a parallel fetching mode for a multi-channel test or in a serial fetching mode for testing a memory of a large capacity, thereby realizing a high speed test, a large capacity memory test and a simultaneous multi-channel test.
申请公布号 US4733392(A) 申请公布日期 1988.03.22
申请号 US19850719293 申请日期 1985.04.03
申请人 HITACHI, LTD. 发明人 YAMAGUCHI, KAZUO
分类号 G11C29/00;G01R31/28;G01R31/3193;G11C29/44;G11C29/56;(IPC1-7):G01R31/28;G06F11/00 主分类号 G11C29/00
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