| 摘要 |
PURPOSE:To reduce the size of a chip and achieve a large capacity and multiple functions by a method wherein different type material which has a sufficiently larger nucleation density than the material of an insulating layer and which is formed into a film whose size is fine enough to make only the single nucleus of the material of a semiconductor layer grow is provided and a transistor which is formed on the insulating layer is formed in a semiconductor crystal layer which is made to grow with the single nucleus formed in the different type material as a center. CONSTITUTION:A P-type channel MOS transistor 2 and an N-type channel MOS transistor 3 are formed on an N-type silicon substrate 1 to compose a C-MOS transistor. An SiO2 layer 5, which is an insulating layer, is formed on the C-MOS transistor and further films 6 and 7 made of Si3H4, which is different type material, are formed on the SiO2 layer 5. Single crystal silicon layers are made to grow with the Si3H4 films 6 and 7 as centers of growth and the surface is flattened by etching back or the like. Source regions 8 and drain regions 9 are formed and further gate electrodes 11 are formed via gate insulating films 10 to constitute MOS transistors 15 and 16 which constitute a gate part.
|
