| 摘要 |
PURPOSE:To restrict the diffusion in the transversal direction at the time of activation annealing of n<+> layer, and obtain the separation length between a gate electrode and the n<+> layer with excellent controllability, by forming an insulative film part containing p-type dopant atom on the side-wall of the gate electrode. CONSTITUTION:Between n<+> layers 14 of a semiconductor substrate 11 such as a semi-insulating GaAs substrate, a gate electrode 12 made of heat-resisting material is arranged on the above substrate 11 to constitute a Schottky barrier gate field effect transistor. On the side-wall of the transistor, an insulative film 13 containing p-type dopant atom is formed. For example, on the semi- insulating GaAs substrate 11, an n-type GaAs single crystal layer 17 of relatively low concentration is formed and the gate electrode 12 is formed. Then, an insulative film 13b, over the whole surface of which p-type dopant atom is introduced, is formed, and subjected to an etching to form an insulative film 13a with a specified width on the side-wall of the gate electrode. Next, ions of n-type impurity of relatively high concentration are implanted, and an n<+> layer 14 is formed. Successively an annealing treatment is performed, and a p-layer 16 is formed just under the insulative film 13a.
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