| 摘要 |
PURPOSE:To eliminate instability in manufacturing accompanied by a lift-off method and to form a T-type gate even for a very short gate length, by supporting a T-type gate electrode with an insulator, removing the insulator with the T-type gate as a mask, and forming a source electrode and a drain electrode at the removed part in a self-aligning mode. CONSTITUTION:A gate electrode, whose cross sectional shape is a T form, is supported with an insulator. With the gate electrode as a mask, a source electrode and a drain electrode are formed in a self-aligning mode. The T-type gate electrode 4 is supported with the insulator 2. Unstable steps such as a lift-off method for the T-type gate are excluded. Therefore, the T-type gate structure can be formed with excellent reproducibility. Since the gate electrode 4 need not be supported at a gate channel part 3, the reliability of the element is not impaired even if the length of the gate channel part 3, i.e., a gate length 8, is made very short.
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