发明名称 APPARATUS FOR VAPOR PHASE GROWTH OF ORGANIC METAL
摘要 PURPOSE:To provide a high-quality, high-reliability IC by providing an adsorbing chamber and allowing partial hydrocarbon liberated from a source gas to be adsorbed by an adsorbing agent, thereby reducing the carbon mixing into the grown film. CONSTITUTION:In the middle of an introducing pipe 12 for making a source gas flow into a reaction chamber, an adsorbing chamber 3 containing an adsorbing agent 31 is provided, and the adsorbing chamber 3 is heated to a temperature lower than the temperature at which the vapor phase cracking of the source gas occurs, providing a construction in which partial hydrocarbon liberated from the source gas is adsorbed by the adsorbing agent 31. For example, in the adsorbing chamber 3 made of a transparent quartz tube, the adsorbing agent 31 of hydrocarbon made of an alumina (Al2O3) powder agent is used. With this, the carbon mixing into the grown metallic film can be reduced appropriately.
申请公布号 JPS63119521(A) 申请公布日期 1988.05.24
申请号 JP19860265777 申请日期 1986.11.07
申请人 FUJITSU LTD 发明人 YOSHIKAWA KOTA
分类号 H01L21/205 主分类号 H01L21/205
代理机构 代理人
主权项
地址