| 摘要 |
PURPOSE:To obtain an excellent epitaxially grown layer, by providing a struc ture wherein a raw-material-temperature holding device is connected to a raw material heater, constituting said raw material holding device so that mixed carrier gas passes through a boiling medium, thereby keeping the temperature of the medium and the saturated vapor pressure in the carrier gas stable. CONSTITUTION:Mixed carrier gas prepared in a raw material heater is fed into a spiral capillary 2-1 of a raw-material-temperature holding device 2 through a capillary 1-4. The other end of the spiral capillary 2-1 is connected to a vapor phase epitaxy device. The spiral capillary 2-1 is immersed in a boiling medium 2-2, e.g., in silicon oil. A heater 2-3 is provided in order to boil said silicone oil. Thus the raw material vapor pressure is precisely con trolled by the temperature of the boiling medium 2-2, the composition of the epitaxially grown crystal and the concentration of the carrier can be kept uniformly and the high quality semiconductor device is obtained.
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