| 摘要 |
PURPOSE:To make it possible to form a very thin uniform membrane film, by using a single crystal SiC as the membrane film. CONSTITUTION:A single crystal SiC 2 is formed on the surface of single crystal Si 1. A single crystal Si film comprising an Si epitaxial material 3 is further formed. Then an SiO2 layer 4 and Si3N4 layers 5 and 6 are formed by chemical vapor deposition method. Then Si3N4 on the rear surface is etched in a graphic pattern. With the graphic pattern of Si3N4 as a mask, rear surface etching 7 is performed in an Si single crystal substrate. The Si3N4 layers 5 and 6 and the SiO2 layer 4 are removed, and a Pyrex ring 8 is stuck. Then ion-beam resist 9 is applied on the surface, and ion-beam exposure and development are performed. With the resist 9 as a mask, reactive ion etching 10 is performed, and the epitaxial layer 3 is etched in a graphic pattern. Then an SiC channelling mask is formed. Thus a very thin membrane film of a uniform thickness can be formed.
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