| 摘要 |
PURPOSE:To keep fluctuation of the threshold voltage small even if the gate length is made short by forming the junction depth of the gate region in the end parts of the channel region larger than the depth in the central part of the channel region. CONSTITUTION:For the existence of a parasitic channel region 13, an effective n-type channel region 4 is usually formed more deeply in the end parts as compared with the central part of the channel region 4. And, according to its shape, the junction depth with a gate region 5 in the end parts of the channel region 4 is formed more deeply as compared with that in the central part. Therefore, the actual channel thickness increases little, and the depletion layer can be widened by an ordinary threshold voltage, enabling the current to be pinched off.
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