| 摘要 |
PURPOSE:To make an epitaxial layer on a Si exposed part grow concurrently with a polycrystalline layer on a SiO2 layer and the while to enable the flattening of a surface of both boundary parts, by using Si2H4 as a reaction gas to form a reduced-pressure vapor phase and making a silicon substrate's surface index by 111. CONSTITUTION:When silicon is made to grow on a silicon substrate 1 on which a silicon dioxide layer 2 is formed partially by selective heat oxidation using a mask, Si2H6 as a reactive gas is used to form a reduced-pressure vapor phase and a surface index of the silicon substrate 1 is made to be 111. For example, an illustrated growth device equipped with a reaction chamber 11, a heater 12, an exhaustion port 14, a reaction gas inflow port 15, a H2 gas supply port 16, a Si2H6 gas supply port 17, and the like is used. When an epitaxial layer 3 of about 0.5mum in thickness is made to grow on the 111 surface Si substrate 1 on which the SiO2 layer 2 of about 0.5mum in thickness is formed by a LOCOS method, a polycrystalline layer 4 of about 0.4mum in average thickness is stably formed on the SiO2 layer 2, and recesses and projections on the surface are within about 0.15mum in height.
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