MANUFATURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a fine and uniform excellent precision pattern by a method wherein a thin wall-shape remnant (fence) which is produced around the pattern when a resist film on a metal film is removed by dry-etching is utilized to form a fine pattern of a film to be processed. CONSTITUTION:A metal film 3 is formed on a film 2 to be processed and a patterned resist film 4 is formed on the metal film 3. Then the resist 4 is removed by dry-etching to form a fence 5 around the pattern and the fine pattern of the film 2 to be processed is formed with the fence 5 and the metal film 3 as a mask. When the resist film 4 on the metal film 3 is removed by dry- etching, the fence 5 is formed around the pattern so as to have a thin and uniform thickness. With this constitution, a semiconductor device which has a fine and uniform excellent precision pattern can be obtained.