METHOD FOR EPITAXIAL GROWTH OF COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To improve the crystallinity of a compound semiconductor film by absorbing the dislocation due to the mismatching of lattice by introducing a defect on the interface of an Si substrate and III and V or II and VI of the compound semiconductor film. CONSTITUTION:GaAs is grown as the first compound semiconductor film 2 on an Si substrate 1 to the thickness wherein a misfitting dislocation is generated or to a less thickness. A defect is induced near the Si interface of a GaAs layer by implanting ions of the same group element such as Ga or As 3. Accordingly, the dislocation due to the mismatching of a lattice can be absorbed without damaging the crystallinity of the semiconductor film 2. Then, the second compound semiconductor film 4 is grown on the semiconductor film 2 at a lower temperature than the temperature of the maximum growth in the first process in order not to recover the defect introduced by the GaAs. This improves the crystallinity of the semiconductor film 2.