| 摘要 |
PURPOSE:To obtain the titled device for producing single crystal which is capable of preventing the constitutional material of a crucible from being mixed into single crystal, by constituting the device so that a raw material melted according to single crystallization thereof is covered with the melted raw material which is dropped into the crucible from a rod of the solid raw material hung to just upper part of the crucible arranged in a furnace core pipe. CONSTITUTION:After firstly arranging a crucible 40 in the part close to peak value of temp. distribution in a furnace core pipe 32 and melting the sintering substance becoming a raw material of single crystal, the crucible 40 is very slowly lowered to the part low in temp. distribution. Thereby since the sintering substance is slowly crystallized from the lower end of the crucible 40, the local change of composition ratio is caused by the difference of gravity or evaporated amount of the composition of the raw material in the noncrystallized part especially in the melted liquid part. The raw material incorporated in the crucible 40 which is decreased according to crystallization can be continuously replenished by regulating amount of the melted raw material dropped from the rod 41 thereof hung to just upper part of the crucible 40. Single crystal uniform in characteristics can be deposited because the dropped raw material is directly fed on the melted raw material and segregation is prevented and a foreign material such as platinum can be prevented from being mixed.
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