发明名称 VAPOR PHASE REACTION EQUIPMENT
摘要 PURPOSE:To obstruct the floating foreign matters in a furnace with a door, and prevent them from sinking and dropping on the horizontal wall of a gate, by installing the door for tightly closing the gate part in the most inside part of the gate in the manner in which the inner wall of the door and the vertical inner wall of a reaction furnace have the same plane. CONSTITUTION:A gate part 20 is protruded against an ordinary pressure CVD reaction furnace 1 of planetary system, and a door 22 for opening and shutting is installed on a fixing end of the gate part 20. The inner end surface of the door 22 and the vertical inner wall of the reaction furnace are arranged so as to have the same plane. When the door 22 is opened, it is accommodated in a recessed part 24 installed on the bottom of the gate part 20. By the effect of a seal 26 arranged on the outer periphery of the inner wall of the door 22, the degree of tightness in the reaction furnace 1 is increased, and by the lid 30 installed on a protruded inlet side of the gate part 20, the raid of foreign matters is prevented. The suspended matters in the reaction furnace 1 are obstructed by the door 22, and prevented from sinking and dropping in the gate part 20. Thereby, when the door 22 is opened and shutt, foreign matters are not sucked in the furnace, and therefore the generation of pin holes in a wafer 6 is prevented.
申请公布号 JPS63157427(A) 申请公布日期 1988.06.30
申请号 JP19860305804 申请日期 1986.12.22
申请人 HITACHI ELECTRONICS ENG CO LTD 发明人 HIKIMA HITOSHI;OYAMA KATSUMI
分类号 H01L21/31 主分类号 H01L21/31
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