发明名称 QUANTUM WELL TYPE SEMICONDUCTOR LASER
摘要 PURPOSE:To suppress the variation of an energy shift rate caused by a small fluctuation of a well width substantially by a method wherein the potential energy distribution along the direction of lamination of a well layer (a layer with a smaller band gap in a quantum well structure which constitutes an active layer) has a parabolic shape. CONSTITUTION:The potential energy distribution along the direction of lamination of a well layer (a layer with a smaller band gap in a quantum well structure which constitutes an active layer) has a parabolic shape. In other words, as the well layer 2 has the parabolic energy distribution and nearly equal spacings are provided between the energy levels 3 and 4 of the electrons in the well, the energy level is in reverse proportion to the well width Lz. With this constitution, the rate of the variation of the energy levels 3 and 4 corresponding to the fluctuation of the well width can be suppressed substantially compared to a conventional MQW-LD.
申请公布号 JPS63161690(A) 申请公布日期 1988.07.05
申请号 JP19860310886 申请日期 1986.12.25
申请人 NEC CORP 发明人 KITAMURA MITSUHIRO
分类号 H01S5/00 主分类号 H01S5/00
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